Sensor-fitted substrate and method for producing sensor-fitted substrate

ABSTRACT

A sensor-fitted substrate allowing a sensor-fitted wafer for measuring the temperature or strain to be produced inexpensively, moreover, allowing measurements of the temperature or strain to be carried out with satisfactory accuracy, and a method for producing such a sensor-fitted substrate. An undercoat film is formed on the surface of a substrate, the film being configured, compared to when no undercoat film is formed, to allow the strength of close contact of a dispersed nano-particle ink with the substrate to be increased, the diffusion of the dispersed nano-particle ink into the substrate to be suppressed, and the growth of metal crystal particles contained in the dispersed nano-particle ink to be suppressed. A wiring pattern of the sensor is traced on the surface of the undercoat film of the substrate surface by using the dispersed nano-particle ink, and the dispersed nano-particle ink is baked and metalized.

TECHNICAL FIELD

The present invention relates to a substrate such as a silicon waferprovided with a sensor for measuring the temperature or/and the strainof a substrate such as a silicon wafer in a high-temperature process,and to a method for producing the same.

BACKGROUND ART

Present in an operation to produce a semiconductor device by performingtreatments on a silicon wafer is a high-temperature process, whichcontrols the temperature of a silicon wafer at a high temperature. Inthe high-temperature process, it is necessary to manage the temperaturewith good accuracy such as when heating each portion of the siliconwafer uniformly, for such purpose as improving the yield. Therefore, asensor-fitted silicon wafer with a temperature sensor provided on thewafer is prepared, and prior to performing treatments on an actualsilicon wafer, such as, at start time of a production line or at launchtime of a production line, the temperature at each portion on thethermally sensor-fitted silicon wafer is measured with the temperaturesensor in the same thermal environment as the actual silicon wafer, andthe temperature controller is finely adjusted in such a way that eachportion of the actual silicon wafer is heated uniformly.

In addition to this, it is desirable that a silicon wafer provided witha strain sensor on the wafer in addition to the temperature sensor isprepared, and at the time of temperature charge in the high-temperatureprocess, the strain (heat strain) of the sensor-fitted silicon wafer ismeasured in addition to the temperature, and, from the result of thismeasurement, the temperature controller is finely adjusted by takinginto account the warping, or the like, of the actual silicon wafer.

The sensors for measuring the temperature or the strain of a siliconwafer are sensors called thermocouples, resistance thermometers andstrain gauges, which measure the temperature or the strain of a siliconwafer by measuring the thermal electromotive force or the resistancevalue of a metal and converting it into temperature.

Cited in the following are methods for producing conventionalsensor-fitted silicon wafers:

A) A method for producing a sensor-fitted silicon wafer by attaching asensor formed into a thin film over a silicon wafer using an adhesive.

B) A method for producing a sensor-fitted silicon wafer by forming ametal thin film constituting the sensor over a silicon wafer by vapordeposition, sputtering or the like (Patent Document 1 mentioned below,or the like).

C) Method for producing a sensor-fitted silicon wafer by forming a metalthin film constituting the sensor over a silicon wafer by the CVD method(Patent Document 2 mentioned below, or the like).

In addition, techniques using a dispersed nano-particle ink to trace awiring pattern over a substrate have been developed in recent years.

D) Described in Patent Documents 3, 4 and 5 are inventions in which aglass layer serving as an insulation layer is formed over a stainlesssubstrate and above this, a wiring pattern is traced using a dispersednano-particle ink having silver as a main component to produce a strainsensor.

-   Patent Document 1: Japanese Patent Application Laid-open No.    S62-139339-   Patent Document 2: Japanese Patent Application Laid-open No.    H08-306665-   Patent Document 3: Japanese Patent Application Laid-open No.    2006-226751-   Patent Document 4: Japanese Patent Application Laid-open No.    2006-242797-   Patent Document 5: Japanese Patent Application Laid-open No.    2007-85993

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

Since the method of (A) described above uses an adhesive to attach asensor to a silicon wafer, depending on the bonding state, warping,creep or drift of the sensor per se occurs readily, varying the measuredvalues of temperature or strain and giving rise to errors, moreover,temperature measurements and strain measurements sometimes cannot becarried out accurately. In addition, for the methods of (B) and (C)described above, although problems such as those arising in the methodof (A) described above do not occur, the equipment for forming a sensoron a silicon wafer becomes extensive, leading to high costs. Especially,in recent years, it has been necessary to form sensors on a siliconwafers with diameters of 300 mm or exceeding 300 mm, and producingsensor-fitted wafers inexpensively while fulfilling the required specshas been difficult. Supplementing further, in order for the measuredvalues to fulfill the specs with a resistance thermometer using amaterial other than Pt for inexpensive production and a conventionalproduction method to spread a meander wiring over the surface, it isnecessary that the meander wiring unit has a larger surface area or thatthe meander wiring thickness becomes more of an ultra-thin film. If thesurface area becomes large, the influence of the warping of thesubstrate per se becomes large, moreover, the use as a temperaturesensor for controlling the in-plane temperature to uniformity isdifficult. When the meander wiring is an ultra-thin film, the influenceof Joule's heat at conduction time, concerns about the continuity of thethin film, and limitations on the method for joining the terminals forelectric signal input/output and conductive wires become problematic.

The method of (D) described above is most definitely one with thepurpose of forming an insulation layer for insulation between metalswhen tracing over a stainless substrate with a dispersed nano-particleink having silver as a main component, and gives no explicit descriptionregarding solving problems other than insulation between metals whentracing over a stainless substrate with a dispersed nano-particle ink.

The present invention was devised in view of such circumstances, and anobject thereof is to allow sensor-fitted wafer for measuring temperatureor strain to be produced inexpensively, moreover, to allow measurementsof temperature or strain to be carried out with good accuracy, andfurthermore, to solve many problems occurring when tracing over asubstrate with a dispersed nano-particle ink.

Means for Solving the Problems

The 1st invention is characterized in

a sensor-fitted substrate having a sensor over a substrate for measuringa temperature or/and strain of the substrate in a high-temperatureprocess, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate,

the substrate is a substrate where metals are diffused, the metals beingcontained in a dispersed nano-particle ink of nano-particles of anymetal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containing Pdor Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

an undercoat film is formed on a surface of the substrate, the filmbeing configured, compared to when no undercoat film is formed on thesurface, to allow a strength of close contact of the dispersednano-particle ink with the substrate to be increased, the diffusion ofthe dispersed nano-particle ink into the substrate to be suppressed, andthe growth of metal crystal particles contained in the dispersednano-particle ink to be suppressed,

a wiring pattern of the sensor is traced on the surface of the undercoatfilm of the substrate surface using the dispersed nano-particle ink,with the dispersed nano-particle ink being baked and metalized.

The 2nd invention according to the 1st invention is characterized inthat

the substrate is silicon wafer or GaAs or GaP or any metal from Al, Cu,Fe, Ti and SUS or carbon.

The 3rd invention is characterized in

a sensor-fitted substrate having a sensor over a substrate for measuringa temperature or/and strain of the substrate in a high-temperatureprocess, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature, thereby measuring the temperatureor/and strain of the substrate,

the substrate is a substrate where metals are not diffused, the metalsbeing contained in a dispersed nano-particle ink of nano-particles ofany metal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containingPd or Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed, andwherein

a wiring pattern of the sensor is traced on the surface of thesubstrate, by coating directly with the dispersed nano-particle ink,with the dispersed nano-particle ink being baked and metalized.

The 4th invention according to the 3rd invention is characterized inthat

the substrate is glass or quartz glass or sapphire or ceramic orpolyimide or Teflon or epoxy or a fiber reinforced material of theseplastics.

The 5th invention is characterized in

a sensor-fitted substrate having a sensor over a substrate for measuringa temperature or/and strain of the substrate in a high-temperatureprocess, wherein

the sensor measures a resistance value of the metal serving as aresistor which is converted into a temperature or/and strain, therebymeasuring the temperature or/and strain of the substrate,

a wiring pattern of the sensor is traced on the surface of the substrateby coating with a dispersed nano-particle ink of nano-particles of anymetal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containing Pdor Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed, with thedispersed nano-particle ink being baked an metalized, and wherein

the substrate with the wiring pattern of the sensor traced and metalizedthereon is treated by annealing at least a temperature employed at thetime of the high-temperature process, or, while flowing a current in thewiring pattern of the sensor.

The 6th invention according to the 1st invention or the 2nd invention incharacterized in that

the substrate with the wiring pattern of the sensor traced and metalizedthereon is treated by annealing at least a temperature employed at thetime of the high-temperature process, or, while flowing a current in thewiring pattern of the sensor.

The 7th invention according to the 3rd invention or the 4th invention ischaracterized in that

the substrate with the wiring pattern of the sensor traced and metalizedthereon is treated by annealing at least a temperature employed at thetime of the high-temperature process, or, while flowing a current in thewiring pattern of the sensor.

The 8th invention is characterized in

a sensor-fitted substrate having a sensor over a substrate for measuringa temperature or/and strain of the substrate in a high-temperatureprocess, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate,

a wiring pattern of the sensor is traced on the surface of the substrateby coating with a dispersed nano-particle ink of nano-particles of anymetal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containing Pdor Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed, with thedispersed nano-particle ink being baked and metalized, and

an overcoat-treatment is performed on the surface of the substrate withthe wiring pattern of the sensor traced and metalized thereon, thetreatment being employed, compared to when no overcoat-treatment isperformed on this substrate surface, to allow growth of metal crystalparticles contained in the dispersed nano-particle ink to be suppressed,the warping of the substrate to be reduced, and to induce the substrateto become less prone to the influence of air convection, and moreover toallow tearing of the wiring pattern of the sensor to be suppressed.

The 9th invention according to the 1st invention or the 2nd invention ischaracterized in that

an overcoat-treatment is performed on the surface of the substrate withthe wiring pattern of the sensor traced and metalized thereon, thetreatment being employed, compared to when no overcoat-treatment isperformed on this substrate surface, to allow growth of metal crystalparticles contained in the dispersed nano-particle ink to be suppressed,warping of the substrate to be reduced, and to induce the substrate tobecome less prone to the influence of air convection, and moreover allowtearing of the wiring pattern of the sensor to be suppressed.

The 10th invention according to the 3rd invention or the 4th inventionis characterized in

an overcoat-treatment is performed on the surface of the substrate withthe wiring pattern of the sensor traced and metalized thereon, thetreatment being employed, compared to when no overcoat-treatment isperformed on this substrate surface, to allow growth of metal crystalparticles contained in the dispersed nano-particle ink to be suppressed,warping of the substrate to be reduced, and to induce the substrate tobecome less prone to the influence of air convection, and moreover allowtearing of the wiring pattern of the sensor to be suppressed.

The 11th invention according to the 5th invention is characterized inthat

an overcoat-treatment is performed on the surface of the substrate withthe wiring pattern of the sensor traced and metalized thereon andtreated by annealing, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed.

The 12th invention according to the 6th invention is characterized inthat

an overcoat-treatment is performed on the surface of the substrate withthe wiring pattern of the sensor traced and metalized thereon andtreated by annealing, the treatment being employed, compared to when noovercoat-treatment has been performed on this substrate surface, toallow growth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed.

The 13th invention according to the 7th invention is characterized inthat

an overcoat-treatment is performed on the surface of the substrate withthe wiring pattern of the sensor traced and metalized thereon andtreated by annealing, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed.

The 14th invention is characterized in

a sensor-fitted substrate having a sensor over a substrate for measuringa temperature or/and strain of the substrate in a high-temperatureprocess, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate,

a wiring pattern of the sensor is traced on the surface of the substrateby coating with a dispersed nano-particle ink of nano-particles of anymetal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containing Pdor Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed, with thedispersed nano-particle ink being baked and metalized,

an overcoat-treatment is performed on the surface of the substrate withthe wiring pattern of the sensor traced and metalized thereon, thetreatment being employed, compared to when no overcoat-treatment isperformed on this substrate surface, to allow growth of metal crystalparticles contained in the dispersed nano-particle ink to be suppressed,warping of the substrate to be reduced, and to induce the substrate tobecome less prone to the influence of air convection, and moreover toallow tearing of

the wiring pattern of the sensor to be suppressed, and theovercoat-treated substrate is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

The 15th invention comprises the 9th invention in which

the overcoat-treated substrate is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

The 16th invention according to the 10th invention is characterized inthat

the overcoat-treated substrate is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

The 17th invention according to the 11th invention is characterized inthat

the overcoat-treated substrate is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

The 18th invention according to the 12th invention is characterized inthat

the overcoat-treated substrate is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

The 19th invention according to the 13th invention is characterized inthat

the overcoat-treated substrate is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

The 20th invention is characterized in

a method for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and

the substrate is a substrate where metals are diffused, the metals beingcontained in a dispersed nano-particle ink of nano-particles of anymetal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containing Pdor Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

the method comprising:

a step of forming an undercoat film on the surface of the substrate, thefilm being configured, compared to when no undercoat film is formed, toallow a strength of close contact of the dispersed nano-particle inkwith the substrate to be increased, diffusion of the dispersednano-particle ink into the substrate to be suppressed, and growth ofmetal crystal particles contained in the dispersed nano-particle ink tobe suppressed;

a step of forming a wiring pattern of the sensor on the surface of theundercoat film of the substrate surface by using the dispersednano-particle ink; and

a step of firing and metalizing the dispersed nano-particle ink.

The 21st invention is characterized in

a method for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and

the substrate is a substrate where metals are not diffused, the metalsbeing contained in a dispersed nano-particle ink of nano-particles ofany metal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containingPd or Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

the method comprising:

a step of forming a wiring pattern of the sensor by coating directlywith the dispersed nano-particle ink; and

a step of firing and metalizing the dispersed nano-particle ink.

The 22nd invention is characterized in

a method for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and

the substrate is a substrate where metals are diffused, the metals beingcontained in a dispersed nano-particle ink of nano-particles of anymetal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containing Pdor Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

the method comprising:

a step of forming an undercoat film on the surface of the substrate, thefilm being configured, compared to when no undercoat film is formed, toallow a strength of close contact of the dispersed nano-particle inkwith the substrate to be increased, diffusion of the dispersednano-particle ink into the substrate to be suppressed, and growth ofmetal crystal particles contained in the dispersed nano-particle ink tobe suppressed;

a step of forming a wiring pattern of the sensor on the surface of theundercoat film of the substrate surface by using the dispersednano-particle ink;

a step of firing and metalizing the dispersed nano-particle ink, and

the step of treating by annealing the substrate with the wiring patternof the sensor traced and metalized thereon at least a temperatureemployed at the time of the high-temperature process, or, while flowinga current in the wiring pattern of the sensor.

The 23rd invention is characterized in

a method for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and

the substrate is a substrate where metals are not diffused, the metalsbeing contained in a dispersed nano-particle ink of nano-particles ofany metal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containingPd or Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

the method comprising:

a step of forming a wiring pattern of the sensor by coating directlywith the dispersed nano-particle ink;

a step of firing and metalizing the dispersed nano-particle ink; and

a step of treating by annealing the substrate with the wiring pattern ofthe sensor traced and metalized thereon at least a temperature employedat the time of the high-temperature process, or, while flowing a currentin the wiring pattern of the sensor.

The 24th invention is characterized in

a method for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and

the substrate is a substrate where metals are diffused, the metals beingcontained in a dispersed nano-particle ink of nano-particles of anymetal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containing Pdor Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

the method comprising:

a step of forming an undercoat film on the surface of the substrate, thefilm being configured, compared to when no undercoat film has beenformed, to allow a strength of close contact of the dispersednano-particle ink with the substrate to be increased, diffusion of thedispersed nano-particle ink into the substrate to be suppressed, andgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed;

a step of forming a wiring pattern of the sensor on the surface of theundercoat film of the substrate surface by using the dispersednano-particle ink;

a step of firing and metalizing the dispersed nano-particle ink;

a step of treating by annealing the substrate with the wiring pattern ofthe sensor traced and metalized thereon at least a temperature employedat the time of the high-temperature process, or, while flowing a currentin the wiring pattern of the sensor; and

a step of performing an overcoat-treatment on the surface of thesubstrate with the wiring pattern of the sensor traced and metalizedthereon and treated by annealing, the treatment being employed, comparedto when no overcoat-treatment is performed on this substrate surface, toallow growth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed.

The 25th invention is characterized in

a method for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and

the substrate is a substrate where metals are not diffused, the metalsbeing contained in a dispersed nano-particle ink of nano-particles ofany metal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containingPd or Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

the method comprising:

a step of forming on the surface of the substrate a wiring pattern ofthe sensor by coating directly with the dispersed nano-particle ink;

a step of firing and metalizing the dispersed nano-particle ink;

a step of treating by annealing the substrate with the wiring pattern ofthe sensor traced and metalized thereon at least a temperature employedat the time of the high-temperature process, or, while flowing a currentin the wiring pattern of the sensor; and

a step of performing an overcoat-treatment on the surface of thesubstrate with the wiring pattern of the sensor traced and metalizedthereon and treated by annealing, the treatment being employed, comparedto when no overcoat-treatment is performed on this substrate surface, toallow growth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed.

The 26th invention is characterized in

a method for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and

the substrate is a substrate where metals are diffused, the metals beingcontained in a dispersed nano-particle ink of nano-particles of anymetal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containing Pdor Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

the method comprising:

a step of forming an undercoat film on the surface of the substrate, thefilm being configured, compared to when no undercoat film is formed, toallow a strength of close contact of the dispersed nano-particle inkwith the substrate to be increased, diffusion of the dispersednano-particle ink into the substrate to be suppressed, and growth ofmetal crystal particles contained in the dispersed nano-particle ink tobe suppressed;

a step of forming a wiring pattern of the sensor on the surface of theundercoat film of the substrate surface by using the dispersednano-particle ink;

a step of firing and metalizing the dispersed nano-particle ink;

a step of performing an overcoat-treatment on the surface of thesubstrate with the wiring pattern of the sensor traced and metalizedthereon, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed; and

a step of treating by annealing the overcoat-treated substrate at leasta temperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

The 27th invention is characterized in

a method for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and

the substrate is a substrate where metals are diffused, the metals beingcontained in a dispersed nano-particle ink of nano-particles of anymetal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containing Pdor Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

the method comprising:

a step of forming a wiring pattern of the sensor by coating directlywith the dispersed nano-particle ink;

a step of firing and metalizing the dispersed nano-particle ink;

a step of performing an overcoat-treatment on the surface of thesubstrate with the wiring pattern of the sensor traced and metalizedthereon, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed; and

a step of treating by annealing the overcoat-treated substrate at leasta temperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

The 28th invention is characterized in

a method for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and

the substrate is a substrate where metals are diffused, the metals beingcontained in a dispersed nano-particle ink of nano-particles of anymetal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containing Pdor Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

the method comprising:

a step of forming an undercoat film on the surface of the substrate, thefilm being configured, compared to when no undercoat film is formed, toallow a strength of close contact of the dispersed nano-particle inkwith the substrate to be increased, diffusion of the dispersednano-particle ink into the substrate to be suppressed, and growth ofmetal crystal particles contained in the dispersed nano-particle ink tobe suppressed;

a step of forming a wiring pattern of the sensor on the surface of theundercoat film of the substrate surface by using the dispersednano-particle ink;

a step of firing and metalizing the dispersed nano-particle ink;

a step of treating by annealing the substrate with the wiring pattern ofthe sensor traced and metalized thereon at least a temperature employedat the time of the high-temperature process, or, while flowing a currentin the wiring pattern of the sensor; and

a step of performing an overcoat-treatment on the surface of thesubstrate with the wiring pattern of the sensor traced and metalizedthereon and treated by annealing, the treatment being employed, comparedto when no overcoat-treatment is performed on this substrate surface, toallow growth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed; and

a step of treating by annealing the overcoat-treated substrate at leasta temperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

The 29th invention is characterized in

a method for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein

the sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and

the substrate is a substrate where metals are not diffused, the metalsbeing contained in a dispersed nano-particle ink of nano-particles ofany metal among Au, Ag, Pt, Ni and Cu or alloy nano-particles containingPd or Cu or Si in Ag or a dispersed nano-particle ink in which Agnano-particles and nano-particles of Pd or Cu or Si are mixed,

the method comprising:

a step of forming on the surface of the substrate a wiring pattern ofthe sensor by coating directly with the dispersed nano-particle ink;

a step of firing and metalizing the dispersed nano-particle ink;

a step of treating by annealing the substrate with the wiring pattern ofthe sensor traced and metalized thereon at least a temperature employedat the time of the high-temperature process, or, while flowing a currentin the wiring pattern of the sensor;

a step of performing an overcoat-treatment on the surface of thesubstrate with the wiring pattern of the sensor traced and metalizedthereon and treated by annealing, the treatment being employed, comparedto when no overcoat-treatment is performed on this substrate surface, toallow growth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed; and

a step of treating by annealing the overcoat-treated substrate at leasta temperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

Effects of the Invention

The sensor-fitted substrate of the present invention is produced bytracing a wiring pattern of the sensor over a substrate using adispersed nano-particle ink of nano-particles of any metal among Au, Ag,Pt, Ni and Cu or alloy nano-particles containing Pd or Cu or Si in Ag ora dispersed nano-particle ink in which Ag nano-particles andnano-particles of Pd or Cu or Si are mixed, and the dispersednano-particle ink being baked and metalized.

Here, the dispersed nano-particle ink is one in which particles of fewhundred nm or less are dispersed in a solvent, and the dispersednano-particle ink is used to trace a wiring pattern of the sensor andthen baked. By performing baking, the organic dispersants and solventscontained in the dispersed nano-particle ink are evaporated, thenano-particles melt into each other and fuse together to acquireelectric conductivity, metalizing into a stable shape. When a wiringpattern of the sensor is produced in this way, owing to the extremelylarge presence of grain boundaries of metal crystals, the apparent rateof electric resistance, or the like, becomes large even when the samemetal is used. Due to this, the noise becomes relatively small, allowinga fine variation in the temperature or strain to be measured with goodaccuracy. Thus, a sensor, such as a resistance thermometer or a straingauge, measuring the resistance value of a metal which is converted intotemperature or/and strain to measure the temperature or/and strain ofthe substrate, becomes less prone to the influence of noise or the like,which improves the precision of the measurements. In addition, by havinga larger resistance value, the meander wiring unit can be reduced,allowing for measurements of temperature or/and strain in finer areas.

It was revealed by the present inventors that substrates such as siliconwafers had the problem that when tracing and metalizing by coatingdirectly with a dispersed nano-particle ink, metals contained in thedispersed nano-particle ink diffused into the substrate. In addition, itwas revealed that the strength of close contact of the dispersednano-particle ink with the substrate was low. In addition, it wasrevealed that the resistance value did not stabilize when constitutionhas been performed as a sensor-fitted substrate. In addition, it wasrevealed that the warping of the substrate occurred.

Thus, an undercoat film is formed on the substrate surface, then, awiring pattern of the sensor is traced and metalized using a dispersednano-particle ink. This elevates the strength of close contact of thedispersed nano-particle ink with the substrate compared to when noundercoat film has been formed on the substrate surface. In addition,the diffusion into the substrate is suppressed in a similar manner. Inaddition, the growth of metal crystal particles is suppressed in asimilar manner, which stabilizes the resistance value when constitutionhas been performed as a sensor-fitted substrate (the 1st invention, the2nd invention, the 9th invention, the 12th invention, the 15thinvention, the 18th invention, the 20th invention, the 22nd invention,the 24th invention, the 26th invention and the 28th invention).

In contrast, with substrates such as glass, even if tracing andmetallization were performed by coating directly with a dispersednano-particle ink, no metal diffuses into the substrate. Thus, regardingsuch substrates, a wiring pattern of the sensor may be traced andmetalized by coating directly on the surface of the substrate with adispersed nano-particle ink (the 3rd invention, the 4th invention, the7th invention, the 10th invention, the 13th invention, the 16thinvention, the 19th invention, the 21st invention, the 23rd invention,the 25th invention, the 27th invention and the 29th invention).

In the 5th invention, the 6th invention, the 7th invention, the 11thinvention, the 12th invention, the 13th invention, the 17th invention,the 18th invention, the 19th invention, the 22nd invention, the 23rdinvention, the 24th invention, the 25th invention, the 28th inventionand the 29th invention, the substrate with the wiring pattern of thesensor traced and metalized thereon is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.

That is to say, the annealing treatment promotes the growth of metalcrystal particles, and in addition, stabilizes unstable atoms present atthe crystal boundary, causing the particle growth to reach anequilibrium state. This stabilizes the boundary energy, stabilizing theelectric resistance value at the operating temperature when asensor-fitted substrate has been constituted. Thus, a stablesensor-fitted substrate can be produced, in which a variation in theresistance value over time during the use of the sensor-fitted substrateis not likely to occur.

In the 8th invention, the 9th invention, the 10th invention, the 11thinvention, the 12th invention, the 13th invention, the 14th invention,the 15th invention, the 16th invention, the 17th invention, the 18thinvention, the 19th invention, the 24th invention, the 25th invention,the 26th invention, the 27th invention, the 28th invention and the 29thinvention, an overcoat-treatment is performed on the surface of thesubstrate where a wiring pattern of the sensor has been traced andmetalized. This suppresses the growth of metal crystal particlescompared to when no overcoat-treatment has been performed on thesubstrate surface, stabilizing the electric resistance value when asensor-fitted substrate has been constituted. Furthermore, warping ofthe substrate can be reduced in a similar manner. In addition, havingbecome less prone to the influence of air convection in a similarmanner, tearing of the wiring pattern of the sensor can be suppressed.

In the 14th invention, the 15th invention, the 16th invention, the 17thinvention, the 18th invention, the 19th invention, the 26th invention,the 27th invention, the 28th invention and the 29th invention, theovercoat-treated substrate is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor. With this,compared to when no treatment by annealing has been performed on theovercoat-treated substrate, since a treatment by annealing is carriedout after the overcoat-treatment, the overcoating material can bestabilized and the resistance value becomes stable when constitution hasbeen performed as a sensor-fitted substrate.

In particular, in the 17th invention, the 18th invention, the 19thinvention, the 28th invention and the 29th invention, a treatment byannealing is carried out prior to overcoat-treatment and a furthertreatment by annealing is carried out after the overcoat-treatment. Witha treatment by annealing carried out prior to overcoat-treatment,compared to treatment by annealing carried out after theovercoat-treatment, the line width of the wiring pattern is prone tobecoming non-uniform due to movements of crystal particles, leading to astate in which the electric resistance value varies. Thus, by carryingout the treatment by annealing after the overcoat-treatment, themovements of crystal particles are suppressed, the line width of thewiring pattern becomes uniform, and the electric resistance valuestabilizes without varying.

In addition, by carrying out the treatment by annealing after theovercoat-treatment, the time needed for the treatment by annealing priorto the overcoat-treatment can be shortened.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereafter, embodiments of the sensor-fitted substrate and the method forproducing the sensor-fitted substrate according to the present inventionwill be described by referring to figures. Note that, silicon wafers areassumed as substrates to provide the descriptions below. However, inaddition to silicon wafers, the present invention can be applied tosubstrates, such as glass substrates, which require that the temperatureor/and the strain of the substrate in a high-temperature process bemeasured during production of the substrate. Now, herein, ahigh-temperature process is a process which may reach a temperature ofapproximately 250° C. or higher.

As far as the type of substrate, adequate is either a substrate wheremetals contained in a dispersed nano-particle ink diffuse into or asubstrate where metals contained in a dispersed nano-particle ink do notdiffuse into.

As substrates where metals contained in a dispersed nano-particle inkdiffuse into, concretely, are silicon wafer or GaAs or GaP or any metalfrom Al, Cu, Fe, Ti and SUS or carbon.

As substrates where metals contained in a dispersed nano-particle ink donot diffuse into, concretely, are glass or quartz glass or sapphire orceramic or polyimide or Teflon or epoxy or fiber reinforced materials ofthese plastics.

In addition, dispersed nano-particle ink, herein, is used with themeaning of an ink comprising nano-particles of any metal among Au, Ag,Pt, Ni and Cu or alloy nano-particles containing Pd or Cu or Si in Agwith a particle size of few hundred nm or less or a dispersednano-particle ink in which Ag nano-particles and nano-particles of Pd orCu or Si are mixed, uniformly dispersed in a solvent.

FIGS. 1A, 1B, 1C and 1D show cross sections of a sensor-fitted siliconwafer 100 at each production step in the examples. Descriptions will beprovided below along with reverences to the figures.

First, a silicon wafer 10 identical to the an silicon wafer used in theproduction of a semiconductor device is prepared, undercoat filmapplication (primer coat) is performed over this silicon wafer 10 forsuch purpose as raising the degree of close contact of the dispersednano-particle ink onto the silicon wafer 10.

The silicon wafer 10 was found to have the problem that, if traced andmetalized by coating directly with a dispersed nano-particle ink, metalscontained in the dispersed nano-particle ink diffuse into the substrate.In addition the strength of close contact of the dispersed nano-particleink with the substrate was found to be low. In addition, the resistancevalue was found not to become stable when constitution has beenperformed as a sensor-fitted silicon wafer 100. In addition, a warpingof silicon wafer 10 was found to occur. Consequently, an undercoat film11 is formed on the surface of the silicon wafer 10 which, compared towhen no undercoat film has been formed on this silicon wafer surface,allows the strength of close contact of the dispersed nano-particle inkwith the substrate to be increased, the diffusion of the dispersednano-particle ink into the silicon wafer 10 to be suppressed, and thegrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed. As materials for undercoat filmsallowing such problems to be solved, organic materials such aspolyimide, inorganic materials such as Ni, Cr, Ti, Al2O3, MN and SiO2,and hybrid materials in which these organic materials and inorganicmaterials are mixed may be cited.

In addition, methods of treating the undercoat film 11 include sputter,ion plating, vapor deposition, spin-coat, dipping, screen printing,thermal fusion bonding and the combination of silane coupling and Niplating.

Sputter, ion plating and vapor deposition are applied in treatment ofthe undercoat film 11 using organic materials and inorganic materials.

Spin-coat, dipping, screen printing and thermal fusion bonding areapplied in treating the undercoat film 11 using organic materials andhybrid materials.

For example, with materials comprising mixed organic materials andinorganic materials serving as a spin-coating material (raw materialsolution), this spin-coating material is placed on top of a siliconwafer 10 and spun, generating an undercoat film 11 comprising rawmaterials uniformly dispersed by the spin-coat method. The undercoatfilm 11 is fixed onto the silicon wafer 10 by carrying out a dryingtreatment at 150° C. to 200° C. for approximately one hour. Here, amongthe materials comprising mixed organic materials and inorganicmaterials, materials that allow the degree of close contact to be raisedafter the dispersed nano-particle ink membrane is baked are used for theorganic materials. In addition, among the materials comprising mixedorganic materials and inorganic materials, materials that allow the heatresistance at the time of high-temperature process to be raised, suchas, Ni, Cr, Ti, Al2O3, AlN and SiO2, are used for the inorganicmaterials (FIG. 1A).

The above assumes the case of a substrate such as silicon wafer 10, inwhich metals contained in the dispersed nano-particle ink diffuse intothe substrate. In contrast, for a substrate such as glass, metalscontained in the dispersed nano-particle ink does not diffuse into thesubstrate even if tracing was performed by coating directly with thedispersed nano-particle ink. Thus, regarding such a substrate, thewiring pattern of the sensor may be traced and metalized by coatingdirectly with the dispersed nano-particle ink on the surface of thesubstrate without performing the undercoat film 11.

Next, for the purpose of refining the wiring pitch, a liquid-repellent12 is coated over the undercoat film 11 in order to increasewater-repelling properties of the dispersed nano-particle ink towardssilicon wafer 10. Coating of the liquid-repellent 12 can be carried outby the spin-coat method. A fluorine series polymer solution or the likecan be used as the liquid-repellent 12 (FIG. 1B).

Next, the wafer 10 is heated at a predetermined temperature to subjectthe liquid-repellent 12 to a drying treatment. This leaves on the orderof one molecular layer of liquid-repellent 12 above the undercoat film11, prevents the ink hitting during ink jet printing from spreading, andallows for printing with fine lines. Since this liquid-repellent layeris evaporated in the baking process of the dispersed nano-particle inkfilm, it has no effects on the dispersed nano-particle ink membranecoming into close contact on the silicon wafer 10 surface.

Next, over the undercoat film 11 of the silicon wafer 10, a dispersednano-particle ink containing Ag as nano-particles is traced into theshape pattern of a temperature sensor or a strain sensor 1 beingcreated, and then baked. By performing baking, the organic dispersantsand solvents contained in the dispersed nano-particle ink areevaporated, the nano-particles melt into each other and fuse together toacquire electric conductivity, metalizing into a stable shape.

The sensor 1 in the present example is a sensor that measures thetemperature or/and strain of the silicon wafer 1 by measuring theresistance value of Ag. For example, dispersed nano-particle ink istraced into the shapes of a sensor portion and a wiring portion that iselectrically connected to the sensor portion by the ink jet method. Anymethods other than the ink jet method are adequate, for example, thegravure printing method can be used. In addition, as far as metalnano-particles contained in the dispersed nano-particle ink,nano-particles of any metal among Au, Pt, Ni and Cu may be usedalternatively to Ag. In addition, alloy nano-particles containing Pd orCu or Si in Ag are also adequate. In addition, Ag nano-particles andnano-particles of Pd or Cu or Si may be mixed (FIG. 1C).

Next, the silicon wafer 10 with the wiring pattern of the sensor 1traced and metalized thereon is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor 1. Forexample, annealing is carried out at a temperature that is higher thanthe maximum temperature for actual use.

The annealing treatment promotes the growth of metal crystal particlesand stabilizes unstable atoms present at the crystal boundary, causingthe particle growth to reach an equilibrium state. This stabilizes theboundary energy, stabilizing the electric resistance value at theoperating temperature of the sensor-fitted silicon wafer 100 when thesensor-fitted silicon wafer 100 has been constituted.

Next, an overcoat-treatment is performed on the surface of silicon wafer10 with the wiring pattern of sensor 1 traced and metalized thereon,which, compared to when no overcoat-treatment has been performed on thesilicon wafer surface, allows the growth of metal crystal particlescontained in the dispersed nano-particle ink to be suppressed, thewarping of the silicon wafer 10 to be reduced, and, having become lessprone to the influence of air convection, allows the tearing of thewiring pattern of the sensor 1 to be suppressed. As overcoating material13 that fulfill such required specs, organic materials such aspolyimide, inorganic materials such as Al2O3, AlN and SiO2, and hybridmaterials in which these organic materials and inorganic materials aremixed may be cited.

In addition, as treatment methods for the overcoat, sputter, ionplating, vapor deposition, spin-coat, dipping, screen printing, thermalfusion bonding, and Al plating followed by alumite treatment may becited.

Sputter, ion plating and vapor deposition are applied whenovercoat-treatment is carried out using organic materials and inorganicmaterials.

Spin-coat, dipping, screen printing, and thermal fusion bonding areapplied when overcoat-treatment is carried out using organic materialsand hybrid materials.

By suppressing the growth of metal crystal particles contained in thedispersed nano-particle ink, the electric resistance value of sensor 1becomes stable. In addition, by performing overcoat-treatment,generation of impurities, such as Ag becoming sulfurated, is suppressed.In addition, by performing overcoat-treatment, the internal stress isalleviated, allowing the warping of the wiring pattern of the sensor 1to be reduced (FIG. 1D).

Next, overcoat-treated sensor-fitted silicon wafer 100 is treated byannealing at at least a temperature employed at the time of thehigh-temperature process, or, by flowing a current in the wiring patternof the sensor 1.

With this, compared to when no treatment by annealing has been performedon the overcoat-treated sensor-fitted silicon wafer 100, since atreatment by annealing is carried out after the overcoat-treatment,overcoating material 13 can be stabilized and the resistance valuebecomes stable when constitution has been performed as a sensor-fittedsilicon wafer 100.

Here, with a treatment by annealing carried out prior toovercoat-treatment, compared to treatment by annealing carried out afterthe overcoat-treatment, the line width of the wiring pattern is prone tobecoming non-uniform due to movements of crystal particles, leading to astate in which the electric resistance value varies. By carrying out thetreatment by annealing after the overcoat-treatment, the movements ofcrystal particles are suppressed, the line width of the wiring patternbecomes uniform, and the electric resistance value stabilizes withoutvarying.

In addition, by carrying out the treatment by annealing after theovercoat-treatment, the time needed for the treatment by annealing priorto the overcoat-treatment can be shortened.

The sensor-fitted wafer 100 is produced as described above.

However, the following steps are added suitably according to the productneeds.

For example, with a ribbon cable being attached to the wiring pattern onthe substrate in order to perform input/output of the electrical output,an electrical input/output terminal on the substrate is attached to theelectrical input/output terminal on the ribbon cable side with ananisotropic electric conductive adhesive sheet. In this case, ananisotropic electric conductive sheet of the via filling type, in whichmetals are embedded in open holes in a film, is used for the anisotropicelectric conductive adhesive sheet.

According to the present embodiment, the following effects are obtained:

A) When a wiring pattern of the sensor 1 is produced using a dispersednano-particle ink, owing to the extremely large presence of grainboundaries of metal crystals, the apparent rate of electric resistancebecomes large even when the same metal is used. Due to this, the noisebecomes relatively small, allowing a fine variation in the temperatureor strain to be measured with good accuracy. Thus, a sensor, such as aresistance thermometer or a strain gauge, measuring the resistance valueof a metal which is converted into temperature or/and strain to measurethe temperature or/and strain of the substrate, becomes less prone tothe influence of noise or the like, which improves the precision of themeasurements. In addition, by having a larger resistance value, themeander wiring unit can be reduced, allowing for measurements oftemperature or/and strain in finer areas.

B) Since the undercoat film 11 is formed on the surface of the siliconwafer 10, then, the wiring pattern of the sensor 1 is traced andmetalized using the dispersed nano-particle ink, strength of closecontact of the dispersed nano-particle ink with the silicon wafer 10becomes elevated compared to when no undercoat film 11 has been formedon the surface of the silicon wafer 10. In addition, the diffusion ofthe dispersed nano-particle ink into the silicon wafer 10 is suppressed.In addition, the growth of metal crystal particles contained in thedispersed nano-particle ink is suppressed, which stabilizes theresistance value when constitution has been performed as thesensor-fitted silicon wafer 100.

C) With substrates such as glass, even if tracing and metallization wereperformed by using a dispersed nano-particle ink, no metal contained ina dispersed nano-particle ink diffuses into the substrate. Thus,regarding such substrates, a wiring pattern of the sensor can be tracedand metalized directly on the surface of the substrate.

D) sensor-fitted silicon wafer 100 with the wiring pattern of the sensor1 traced and metalized thereon is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor 1. Theannealing treatment promotes the growth of metal crystal particles, andin addition, stabilizes unstable atoms present at the crystal boundary,causing the particle growth to reach an equilibrium state. Thisstabilizes the boundary energy, stabilizing the electric resistancevalue at the operating temperature when a sensor-fitted silicon wafer100 has been constituted. Thus, a stable sensor-fitted silicon wafer 100can be produced, in which a variation in the resistance value over timeduring the use of the sensor-fitted silicon wafer 100 is not likely tooccur.

E) An overcoat-treatment is performed on the surface of thesensor-fitted silicon wafer 100 where a wiring pattern of the sensor 1has been traced and metalized. This suppresses the growth of metalcrystal particles contained in the dispersed nano-particle ink comparedto when no overcoat-treatment has been performed on the surface of thesensor-fitted silicon wafer 100 surface, stabilizing the electricresistance value when the sensor-fitted silicon wafer 100 has beenconstituted. Furthermore, warping of the sensor-fitted silicon wafer 100can be reduced in a similar manner. In addition, having become lessprone to the influence of air convection in a similar manner, tearing ofthe wiring pattern of the sensor 1 can be suppressed.

F) The overcoat-treated sensor-fitted silicon wafer 100 is treated byannealing at least a temperature employed at the time of thehigh-temperature process, or, while flowing a current in the wiringpattern of the sensor 1. With this, compared to when no treatment byannealing has been performed on the overcoat-treated sensor-fittedsilicon wafer 100, since a treatment by annealing is carried out afterthe overcoat-treatment, the overcoating material 13 can be stabilized,and the resistance value becomes stable when constitution has beenperformed the sensor-fitted silicon wafer 100. In addition, with atreatment by annealing carried out prior to overcoat-treatment, comparedto treatment by annealing carried out after the overcoat-treatment, theline width of the wiring pattern is prone to becoming non-uniform due tomovements of crystal particles, leading to a state in which the electricresistance value varies. By carrying out the treatment by annealingafter the overcoat-treatment, the movements of crystal particles aresuppressed, the line width of the wiring pattern becomes uniform, andthe electric resistance value stabilizes without varying. In addition,by carrying out the treatment by annealing after the overcoat-treatment,the time needed for the treatment by annealing prior to theovercoat-treatment can be shortened.

Hereafter, each example will be described.

Example 1

A material for an undercoat film 11 was coated over the surface of asilicon wafer 10 with a diameter of 300 mm using the spin-coat method(1000 rpm×30 sec) and dried by a 150° C.×1 hr heat-treatment. Next, aliquid-repellent diluted 50 folds with a solvent was coated over thisundercoat film 11 using the spin-coat method (1000 rpm×30 sec) and driedby a 150° C.×1 hr heat-treatment. Next, using a dispersed nano-particleink containing Ag, a wiring pattern was traced on the surface of thesilicon wafer 10 where the liquid-repellent was dried. An ink jet devicewas used for tracing the wiring pattern.

Next, the silicon wafer 10 with the wiring pattern traced thereon wasintroduced into a ventilated oven heated to 230° C. to perform bakingtreatment of the dispersed nano-particle ink and metalize the dispersednano-particle ink.

Through such steps, a sensor-fitted silicon wafer 100 such as the oneshown in FIGS. 2A to 2C was produced, having a meander wiring unit at 29locations. FIG. 2A shows the surface of the sensor-fitted silicon wafer100, FIG. 2B shows enlarged an individual sensor 1 on the surface of thesensor-fitted silicon wafer 100 shown in FIG. 2A and FIG. 2C showsenlarged the meander wiring unit of the sensor 1 shown in FIG. 2B.

The sensor-fitted silicon wafer 100 was sent back and forth over apredetermined time between a cooling plate thermostated at 23° C. and ahot plate thermostated at 100° C. to measure the resistance value of thesensor 1 repeatedly. The measurement results are shown in FIG. 3. Thehorizontal axis in FIG. 3 is time (sec) and the vertical axis is theresistance value (Ω) of the sensor 1. As shown in FIG. 3, the peakvalues of the electric resistance value are confined to a range of 0.2Ωfrom 777.6Ω to 777.8Ω (corresponding to approximately 0.1° C. intemperature), revealing that there is only a slight error ofapproximately 0.1° C. or less to measure 100° C.

Example 2

In Example 2, a dispersed nano-particle ink was baked and metalizedthrough similar treatments to Example 1 described above.

After baking, annealing treatment was performed for a predetermined timeat the operating temperature of the sensor-fitted silicon wafer 100 orhigher (for example, 250° C.) while flowing current in the wiringpattern.

The produced sensor-fitted silicon wafer 100 was used and sent back andforth between a cooling plate thermostated at 23° C. and a hot platethermostated at 100° C. to measure the resistance value of the sensor 1repeatedly, similarly to Example 1.

As shown in FIG. 4, the peak values of the electric resistance value areconfined to a range of 0.2Ω from 1,191.3Ω to 1,191.5Ω (corresponding toapproximately 0.1° C. in temperature), revealing that there is only aslight error of approximately 0.1° C. or less to measure 100° C.However, when compared to Example 1, the electric resistance value hasincreased to measure the same 100° C., revealing that the stability ofthe electric resistance value has improved.

Example 3

In Example 3, a dispersed nano-particle ink was baked and metalizedthrough similar treatments to Example 1 described above.

After baking, as an overcoating material 13, a resin ink was coated overthe wiring pattern by the spin-coat method and dried by a 150° C.×1 hrheat treatment.

When the produced sensor-fitted silicon wafer 100 was used to measurethe characteristics thereof similarly to Example 1, similar results toFIG. 3 were obtained.

Example 4

Example 4, a dispersed nano-particle ink was baked and metalized throughsimilar treatments to Example 1 described above.

After baking, as an overcoating material 13, Al2O3 was coated over thewiring pattern by ion plating.

The produced sensor-fitted silicon wafer 100 was left alone on a coveredhot plate thermostated at 250° C., which is representative of thetemperature at the time of a high-temperature process, the variationover time in each resistance value from the sensor 1 and 2 at twolocations traced over the same wafer 10 was measured repeatedly. Themeasurement results are shown in FIG. 5. The horizontal axis in FIG. 5is time (hr) and the vertical axis is each resistance value Ag1 and Ag2(kΩ) from the sensor 1 and 2 at two locations traced over the same wafer10. Note that the measured data were grouped hour by hour, type Auncertainty was calculated based on JIS Z8404, and the error bars wererepresented with K=2. For both of each resistance value Ag1 and Ag2, theresistance value shifts within the error range for at least 100 hours,revealing that the dispersed nano-particle ink is stable withoutchanging over time due to heat. Note that similar characteristics werealso obtained when AlN and SiO2 were used for the overcoating material13.

Example 5

Similarly to Example 1, an undercoat film 11 was formed on the surfaceof the silicon wafer 10. The undercoat film 11 was formed by acombination of silane coupling and Ni plating.

After the undercoat film 11 was formed, a dispersed nano-particle inkcontaining Ag was used to trace a wiring pattern, and the dispersednano-particle ink was baked and metalized through similar steps toExample 1.

Next, portions of the Ni plating film that were not in close contactwith the wiring pattern were eliminated by plasma etching.

When the produced sensor-fitted silicon wafer 100 was used to measurethe characteristics thereof similarly to Example 1, results similar toFIG. 3 were obtained.

Example 6

As the dispersed nano-particle ink, one comprising Pd diffused into Agwas used. The steps for producing the sensor-fitted silicon wafer 100were carried out similarly to FIGS. 1A to 1D.

When the produced sensor-fitted silicon wafer 100 was used to measurethe characteristics thereof similarly to Example 1, results similar toFIG. 3 were obtained.

Example 7

Similarly to Example 4, after the overcoat-treatment was carried out, atreatment by annealing was carried out for a predetermined time at theoperating temperature of the sensor-fitted silicon wafer 100 or higherwhile flowing a current in the wiring pattern.

When the produced sensor-fitted silicon wafer 100 was used to measurethe characteristics thereof similarly to Example 4, results similar toFIG. 5 were obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 1B, 1C and 1D are figures showing the cross-section of thesensor-fitted silicon wafer of the examples at each production step.

FIGS. 2A, 2B and 2C are figures showing a sensor-fitted silicon waferhaving a meander wiring unit at 29 locations, FIG. 2A being a figureshowing the surface of the sensor-fitted silicon wafer, FIG. 2B being afigure showing enlarged an individual sensor on the surface of thesensor-fitted silicon wafer shown in FIG. 2A, and FIG. 2C being a figureshowing enlarged a meander wiring unit of the sensor shown in FIG. 2B.

FIG. 3 is a graph showing the results of sending, after bakingtreatment, a sensor-fitted silicon wafer back and forth between acooling plate thermostated at 23° C. and a hot plate thermostated at100° C. to measure the resistance value of the sensor 1 repeatedly.

FIG. 4 is a graph showing the results of sending, after annealingtreatment, a sensor-fitted silicon wafer back and forth between acooling plate thermostated at 23° C. and a hot plate thermostated at100° C. to measure the resistance value of the sensor 1 repeatedly.

FIG. 5 is a graph showing the results of leaving, afterovercoat-treatment, a sensor-fitted silicon wafer on a covered hot platethermostated at 250° C., which is representative of the temperature atthe time of a high-temperature process, to measure repeatedly thevariation over time in each resistance value of the sensors at twolocations traced over the same wafer.

1. A sensor-fitted substrate having a sensor over a substrate formeasuring a temperature or/and strain of the substrate in ahigh-temperature process, wherein the sensor measures a resistance valueof a metal serving as a resistor which is converted into a temperatureor/and strain, thereby measuring the temperature or/and strain of thesubstrate, the substrate is a substrate where metals are diffused, themetals being contained in a dispersed nano-particle ink ofnano-particles of any metal among Au, Ag, Pt, Ni and Cu or alloynano-particles containing Pd or Cu or Si in Ag or a dispersednano-particle ink in which Ag nano-particles and nano-particles of Pd orCu or Si are mixed, an undercoat film is formed on a surface of thesubstrate, the film being configured, compared to when no undercoat filmis formed on the surface, to allow a strength of close contact of thedispersed nano-particle ink with the substrate to be increased, thediffusion of the dispersed nano-particle ink into the substrate to besuppressed, and the growth of metal crystal particles contained in thedispersed nano-particle ink to be suppressed, a wiring pattern of thesensor is traced on the surface of the undercoat film of the substratesurface using the dispersed nano-particle ink, with the dispersednano-particle ink being baked and metalized.
 2. The sensor-fittedsubstrate comprising claim 1, wherein the substrate is silicon wafer orGaAs or GaP or any metal from Al, Cu, Fe, Ti and SUS or carbon.
 3. Asensor-fitted substrate having a sensor over a substrate for measuring atemperature or/and strain of the substrate in a high-temperatureprocess, wherein the sensor measures a resistance value of a metalserving as a resistor which is converted into a temperature, therebymeasuring the temperature or/and strain of the substrate, the substrateis a substrate where metals are not diffused, the metals being containedin a dispersed nano-particle ink of nano-particles of any metal amongAu, Ag, Pt, Ni and Cu or alloy nano-particles containing Pd or Cu or Siin Ag or a dispersed nano-particle ink in which Ag nano-particles andnano-particles of Pd or Cu or Si are mixed, and wherein a wiring patternof the sensor is traced on the surface of the substrate, by coatingdirectly with the dispersed nano-particle ink, with the dispersednano-particle ink being baked and metalized.
 4. The sensor-fittedsubstrate according to claim 3, wherein the substrate is glass or quartzglass or sapphire or ceramic or polyimide or Teflon or epoxy or a fiberreinforced material of these plastics.
 5. A sensor-fitted substratehaving a sensor over a substrate for measuring a temperature or/andstrain of the substrate in a high-temperature process, wherein thesensor measures a resistance value of the metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, a wiring pattern of thesensor is traced on the surface of the substrate by coating with adispersed nano-particle ink of nano-particles of any metal among Au, Ag,Pt, Ni and Cu or alloy nano-particles containing Pd or Cu or Si in Ag ora dispersed nano-particle ink in which Ag nano-particles andnano-particles of Pd or Cu or Si are mixed, with the dispersednano-particle ink being baked an metalized, and wherein the substratewith the wiring pattern of the sensor traced and metalized thereon istreated by annealing at least a temperature employed at the time of thehigh-temperature process, or, while flowing a current in the wiringpattern of the sensor.
 6. The sensor-fitted substrate according to claim1, wherein the substrate with the wiring pattern of the sensor tracedand metalized thereon is treated by annealing at least a temperatureemployed at the time of the high-temperature process, or, while flowinga current in the wiring pattern of the sensor.
 7. The sensor-fittedsubstrate according to claim 3, wherein the substrate with the wiringpattern of the sensor traced and metalized thereon is treated byannealing at least a temperature employed at the time of thehigh-temperature process, or, while flowing a current in the wiringpattern of the sensor.
 8. A sensor-fitted substrate having a sensor overa substrate for measuring a temperature or/and strain of the substratein a high-temperature process, wherein the sensor measures a resistancevalue of a metal serving as a resistor which is converted into atemperature or/and strain, thereby measuring the temperature or/andstrain of the substrate, a wiring pattern of the sensor is traced on thesurface of the substrate by coating with a dispersed nano-particle inkof nano-particles of any metal among Au, Ag, Pt, Ni and Cu or alloynano-particles containing Pd or Cu or Si in Ag or a dispersednano-particle ink in which Ag nano-particles and nano-particles of Pd orCu or Si are mixed, with the dispersed nano-particle ink being baked andmetalized, and an overcoat-treatment is performed on the surface of thesubstrate with the wiring pattern of the sensor traced and metalizedthereon, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, the warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed.
 9. The sensor-fitted substrateaccording to claim 1, wherein an overcoat-treatment is performed on thesurface of the substrate with the wiring pattern of the sensor tracedand metalized thereon, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover allow tearing of the wiringpattern of the sensor to be suppressed.
 10. The sensor-fitted substrateaccording to claim 3, wherein an overcoat-treatment is performed on thesurface of the substrate with the wiring pattern of the sensor tracedand metalized thereon, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover allow tearing of the wiringpattern of the sensor to be suppressed.
 11. The sensor-fitted substratecomprising claim 5, wherein an overcoat-treatment is performed on thesurface of the substrate with the wiring pattern of the sensor tracedand metalized thereon and treated by annealing, the treatment beingemployed, compared to when no overcoat-treatment is performed on thissubstrate surface, to allow growth of metal crystal particles containedin the dispersed nano-particle ink to be suppressed, warping of thesubstrate to be reduced, and to induce the substrate to become lessprone to the influence of air convection, and moreover to allow tearingof the wiring pattern of the sensor to be suppressed.
 12. Thesensor-fitted substrate according to claim 6, wherein anovercoat-treatment is performed on the surface of the substrate with thewiring pattern of the sensor traced and metalized thereon and treated byannealing, the treatment being employed, compared to when noovercoat-treatment has been performed on this substrate surface, toallow growth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed.
 13. The sensor-fitted substrateaccording to claim 7, wherein an overcoat-treatment is performed on thesurface of the substrate with the wiring pattern of the sensor tracedand metalized thereon and treated by annealing, the treatment beingemployed, compared to when no overcoat-treatment is performed on thissubstrate surface, to allow growth of metal crystal particles containedin the dispersed nano-particle ink to be suppressed, warping of thesubstrate to be reduced, and to induce the substrate to become lessprone to the influence of air convection, and moreover to allow tearingof the wiring pattern of the sensor to be suppressed.
 14. Asensor-fitted substrate having a sensor over a substrate for measuring atemperature or/and strain of the substrate in a high-temperatureprocess, wherein the sensor measures a resistance value of a metalserving as a resistor which is converted into a temperature or/andstrain, thereby measuring the temperature or/and strain of thesubstrate, a wiring pattern of the sensor is traced on the surface ofthe substrate by coating with a dispersed nano-particle ink ofnano-particles of any metal among Au, Ag, Pt, Ni and Cu or alloynano-particles containing Pd or Cu or Si in Ag or a dispersednano-particle ink in which Ag nano-particles and nano-particles of Pd orCu or Si are mixed, with the dispersed nano-particle ink being baked andmetalized, an overcoat-treatment is performed on the surface of thesubstrate with the wiring pattern of the sensor traced and metalizedthereon, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed, and the overcoat-treatedsubstrate is treated by annealing at least a temperature employed at thetime of the high-temperature process, or, while flowing a current in thewiring pattern of the sensor.
 15. The sensor-fitted substrate accordingto claim 9, wherein the overcoat-treated substrate is treated byannealing at a temperature at least a temperature employed at the timeof the high-temperature process, or, while flowing a current in thewiring pattern of the sensor.
 16. The sensor-fitted substrate accordingto claim 10, wherein the overcoat-treated substrate is treated byannealing at least a temperature employed at the time of thehigh-temperature process, or, while flowing a current in the wiringpattern of the sensor.
 17. The sensor-fitted substrate according toclaim 11, wherein the overcoat-treated substrate is treated by annealingat least a temperature employed at the time of the high-temperatureprocess, or, while flowing a current in the wiring pattern of thesensor.
 18. The sensor-fitted substrate according to claim 12, whereinthe overcoat-treated substrate is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.
 19. Thesensor-fitted substrate according to claim 13, wherein theovercoat-treated substrate is treated by annealing at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.
 20. Amethod for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein the sensor measures a resistancevalue of a metal serving as a resistor which is converted into atemperature or/and strain, thereby measuring the temperature or/andstrain of the substrate, and the substrate is a substrate where metalsare diffused, the metals being contained in a dispersed nano-particleink of nano-particles of any metal among Au, Ag, Pt, Ni and Cu or alloynano-particles containing Pd or Cu or Si in Ag or a dispersednano-particle ink in which Ag nano-particles and nano-particles of Pd orCu or Si are mixed, the method comprising: a step of forming anundercoat film on the surface of the substrate, the film beingconfigured, compared to when no undercoat film is formed, to allow astrength of close contact of the dispersed nano-particle ink with thesubstrate to be increased, diffusion of the dispersed nano-particle inkinto the substrate to be suppressed, and growth of metal crystalparticles contained in the dispersed nano-particle ink to be suppressed;a step of forming a wiring pattern of the sensor on the surface of theundercoat film of the substrate surface by using the dispersednano-particle ink; and a step of firing and metalizing the dispersednano-particle ink.
 21. A method for producing a sensor-fitted substratehaving a sensor over a substrate for measuring a temperature or/andstrain of the substrate in a high-temperature process, wherein thesensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and the substrate is asubstrate where metals are not diffused, the metals being contained in adispersed nano-particle ink of nano-particles of any metal among Au, Ag,Pt, Ni and Cu or alloy nano-particles containing Pd or Cu or Si in Ag ora dispersed nano-particle ink in which Ag nano-particles andnano-particles of Pd or Cu or Si are mixed, the method comprising: astep of forming a wiring pattern of the sensor by coating directly withthe dispersed nano-particle ink; and a step of firing and metalizing thedispersed nano-particle ink.
 22. A method for producing a sensor-fittedsubstrate having a sensor over a substrate for measuring a temperatureor/and strain of the substrate in a high-temperature process, whereinthe sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and the substrate is asubstrate where metals are diffused, the metals being contained in adispersed nano-particle ink of nano-particles of any metal among Au, Ag,Pt, Ni and Cu or alloy nano-particles containing Pd or Cu or Si in Ag ora dispersed nano-particle ink in which Ag nano-particles andnano-particles of Pd or Cu or Si are mixed, the method comprising: astep of forming an undercoat film on the surface of the substrate, thefilm being configured, compared to when no undercoat film is formed, toallow a strength of close contact of the dispersed nano-particle inkwith the substrate to be increased, diffusion of the dispersednano-particle ink into the substrate to be suppressed, and growth ofmetal crystal particles contained in the dispersed nano-particle ink tobe suppressed; a step of forming a wiring pattern of the sensor on thesurface of the undercoat film of the substrate surface by using thedispersed nano-particle ink; a step of firing and metalizing thedispersed nano-particle ink, and the step of treating by annealing thesubstrate with the wiring pattern of the sensor traced and metalizedthereon at least a temperature employed at the time of thehigh-temperature process, or, while flowing a current in the wiringpattern of the sensor.
 23. A method for producing a sensor-fittedsubstrate having a sensor over a substrate for measuring a temperatureor/and strain of the substrate in a high-temperature process, whereinthe sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and the substrate is asubstrate where metals are not diffused, the metals being contained in adispersed nano-particle ink of nano-particles of any metal among Au, Ag,Pt, Ni and Cu or alloy nano-particles containing Pd or Cu or Si in Ag ora dispersed nano-particle ink in which Ag nano-particles andnano-particles of Pd or Cu or Si are mixed, the method comprising: astep of forming a wiring pattern of the sensor by coating directly withthe dispersed nano-particle ink; a step of firing and metalizing thedispersed nano-particle ink; and a step of treating by annealing thesubstrate with the wiring pattern of the sensor traced and metalizedthereon at least a temperature employed at the time of thehigh-temperature process, or, while flowing a current in the wiringpattern of the sensor.
 24. A method for producing a sensor-fittedsubstrate having a sensor over a substrate for measuring a temperatureor/and strain of the substrate in a high-temperature process, whereinthe sensor measures a resistance value of a metal serving as a resistorwhich is converted into a temperature or/and strain, thereby measuringthe temperature or/and strain of the substrate, and the substrate is asubstrate where metals are diffused, the metals being contained in adispersed nano-particle ink of nano-particles of any metal among Au, Ag,Pt, Ni and Cu or alloy nano-particles containing Pd or Cu or Si in Ag ora dispersed nano-particle ink in which Ag nano-particles andnano-particles of Pd or Cu or Si are mixed, the method comprising: astep of forming an undercoat film on the surface of the substrate, thefilm being configured, compared to when no undercoat film has beenformed, to allow a strength of close contact of the dispersednano-particle ink with the substrate to be increased, diffusion of thedispersed nano-particle ink into the substrate to be suppressed, andgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed; a step of forming a wiring patternof the sensor on the surface of the undercoat film of the substratesurface by using the dispersed nano-particle ink; a step of firing andmetalizing the dispersed nano-particle ink; a step of treating byannealing the substrate with the wiring pattern of the sensor traced andmetalized thereon at least a temperature employed at the time of thehigh-temperature process, or, while flowing a current in the wiringpattern of the sensor; and a step of performing an overcoat-treatment onthe surface of the substrate with the wiring pattern of the sensortraced and metalized thereon and treated by annealing, the treatmentbeing employed, compared to when no overcoat-treatment is performed onthis substrate surface, to allow growth of metal crystal particlescontained in the dispersed nano-particle ink to be suppressed, warpingof the substrate to be reduced, and to induce the substrate to becomeless prone to the influence of air convection, and moreover to allowtearing of the wiring pattern of the sensor to be suppressed.
 25. Amethod for producing a sensor-fitted substrate having a sensor over asubstrate for measuring a temperature or/and strain of the substrate ina high-temperature process, wherein the sensor measures a resistancevalue of a metal serving as a resistor which is converted into atemperature or/and strain, thereby measuring the temperature or/andstrain of the substrate, and the substrate is a substrate where metalsare not diffused, the metals being contained in a dispersednano-particle ink of nano-particles of any metal among Au, Ag, Pt, Niand Cu or alloy nano-particles containing Pd or Cu or Si in Ag or adispersed nano-particle ink in which Ag nano-particles andnano-particles of Pd or Cu or Si are mixed, the method comprising: astep of forming on the surface of the substrate a wiring pattern of thesensor by coating directly with the dispersed nano-particle ink; a stepof firing and metalizing the dispersed nano-particle ink; a step oftreating by annealing the substrate with the wiring pattern of thesensor traced and metalized thereon at least a temperature employed atthe time of the high-temperature process, or, while flowing a current inthe wiring pattern of the sensor; and a step of performing anovercoat-treatment on the surface of the substrate with the wiringpattern of the sensor traced and metalized thereon and treated byannealing, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed.
 26. A method for producing asensor-fitted substrate having a sensor over a substrate for measuring atemperature or/and strain of the substrate in a high-temperatureprocess, wherein the sensor measures a resistance value of a metalserving as a resistor which is converted into a temperature or/andstrain, thereby measuring the temperature or/and strain of thesubstrate, and the substrate is a substrate where metals are diffused,the metals being contained in a dispersed nano-particle ink ofnano-particles of any metal among Au, Ag, Pt, Ni and Cu or alloynano-particles containing Pd or Cu or Si in Ag or a dispersednano-particle ink in which Ag nano-particles and nano-particles of Pd orCu or Si are mixed, the method comprising: a step of forming anundercoat film on the surface of the substrate, the film beingconfigured, compared to when no undercoat film is formed, to allow astrength of close contact of the dispersed nano-particle ink with thesubstrate to be increased, diffusion of the dispersed nano-particle inkinto the substrate to be suppressed, and growth of metal crystalparticles contained in the dispersed nano-particle ink to be suppressed;a step of forming a wiring pattern of the sensor on the surface of theundercoat film of the substrate surface by using the dispersednano-particle ink; a step of firing and metalizing the dispersednano-particle ink; a step of performing an overcoat-treatment on thesurface of the substrate with the wiring pattern of the sensor tracedand metalized thereon, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed; and a step of treating byannealing the overcoat-treated substrate at least a temperature employedat the time of the high-temperature process, or, while flowing a currentin the wiring pattern of the sensor.
 27. A method for producing asensor-fitted substrate having a sensor over a substrate for measuring atemperature or/and strain of the substrate in a high-temperatureprocess, wherein the sensor measures a resistance value of a metalserving as a resistor which is converted into a temperature or/andstrain, thereby measuring the temperature or/and strain of thesubstrate, and the substrate is a substrate where metals are diffused,the metals being contained in a dispersed nano-particle ink ofnano-particles of any metal among Au, Ag, Pt, Ni and Cu or alloynano-particles containing Pd or Cu or Si in Ag or a dispersednano-particle ink in which Ag nano-particles and nano-particles of Pd orCu or Si are mixed, the method comprising: a step of forming a wiringpattern of the sensor by coating directly with the dispersednano-particle ink; a step of firing and metalizing the dispersednano-particle ink; a step of performing an overcoat-treatment on thesurface of the substrate with the wiring pattern of the sensor tracedand metalized thereon, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed; and a step of treating byannealing the overcoat-treated substrate at least a temperature employedat the time of the high-temperature process, or, while flowing a currentin the wiring pattern of the sensor.
 28. A method for producing asensor-fitted substrate having a sensor over a substrate for measuring atemperature or/and strain of the substrate in a high-temperatureprocess, wherein the sensor measures a resistance value of a metalserving as a resistor which is converted into a temperature or/andstrain, thereby measuring the temperature or/and strain of thesubstrate, and the substrate is a substrate where metals are diffused,the metals being contained in a dispersed nano-particle ink ofnano-particles of any metal among Au, Ag, Pt, Ni and Cu or alloynano-particles containing Pd or Cu or Si in Ag or a dispersednano-particle ink in which Ag nano-particles and nano-particles of Pd orCu or Si are mixed, the method comprising: a step of forming anundercoat film on the surface of the substrate, the film beingconfigured, compared to when no undercoat film is formed, to allow astrength of close contact of the dispersed nano-particle ink with thesubstrate to be increased, diffusion of the dispersed nano-particle inkinto the substrate to be suppressed, and growth of metal crystalparticles contained in the dispersed nano-particle ink to be suppressed;a step of forming a wiring pattern of the sensor on the surface of theundercoat film of the substrate surface by using the dispersednano-particle ink; a step of firing and metalizing the dispersednano-particle ink; a step of treating by annealing the substrate withthe wiring pattern of the sensor traced and metalized thereon at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor; and a stepof performing an overcoat-treatment on the surface of the substrate withthe wiring pattern of the sensor traced and metalized thereon andtreated by annealing, the treatment being employed, compared to when noovercoat-treatment is performed on this substrate surface, to allowgrowth of metal crystal particles contained in the dispersednano-particle ink to be suppressed, warping of the substrate to bereduced, and to induce the substrate to become less prone to theinfluence of air convection, and moreover to allow tearing of the wiringpattern of the sensor to be suppressed; and a step of treating byannealing the overcoat-treated substrate at least a temperature employedat the time of the high-temperature process, or, while flowing a currentin the wiring pattern of the sensor.
 29. A method for producing asensor-fitted substrate having a sensor over a substrate for measuring atemperature or/and strain of the substrate in a high-temperatureprocess, wherein the sensor measures a resistance value of a metalserving as a resistor which is converted into a temperature or/andstrain, thereby measuring the temperature or/and strain of thesubstrate, and the substrate is a substrate where metals are notdiffused, the metals being contained in a dispersed nano-particle ink ofnano-particles of any metal among Au, Ag, Pt, Ni and Cu or alloynano-particles containing Pd or Cu or Si in Ag or a dispersednano-particle ink in which Ag nano-particles and nano-particles of Pd orCu or Si are mixed, the method comprising: a step of forming on thesurface of the substrate a wiring pattern of the sensor by coatingdirectly with the dispersed nano-particle ink; a step of firing andmetalizing the dispersed nano-particle ink; a step of treating byannealing the substrate with the wiring pattern of the sensor traced andmetalized thereon at least a temperature employed at the time of thehigh-temperature process, or, while flowing a current in the wiringpattern of the sensor; a step of performing an overcoat-treatment on thesurface of the substrate with the wiring pattern of the sensor tracedand metalized thereon and treated by annealing, the treatment beingemployed, compared to when no overcoat-treatment is performed on thissubstrate surface, to allow growth of metal crystal particles containedin the dispersed nano-particle ink to be suppressed, warping of thesubstrate to be reduced, and to induce the substrate to become lessprone to the influence of air convection, and moreover to allow tearingof the wiring pattern of the sensor to be suppressed; and a step oftreating by annealing the overcoat-treated substrate at least atemperature employed at the time of the high-temperature process, or,while flowing a current in the wiring pattern of the sensor.